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FDS5170N7
May 2003
FDS5170N7
60V N-Channel PowerTrench MOSFET
General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for "low side" synchronous rectifier operation, providing an extremely low RDS(ON) in a small package.
Features
* 10.6 A, 60 V. RDS(ON) = 12 m @ VGS = 10 V RDS(ON) = 15 m @ VGS = 6.0 V * High performance trench technology for extremely low RDS(ON) * High power and current handling capability * Fast switching, low gate charge (51nC typical) * FLMP SO-8 package: Enhanced thermal performance in industry-standard package size
Applications
* Synchronous rectifier * DC/DC converter
5 6 7 8
Bottom-side Drain Contact
4 3 2 1
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed
TA=25oC unless otherwise noted
Parameter
Ratings
60 20
(Note 1a)
Units
V V A W C
10.6 50 3.0 -55 to +150
Power Dissipation for Single Operation
(Note 1a)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RJA RJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1)
40 0.5
C/W
Package Marking and Ordering Information
Device Marking FDS5170N7 Device FDS5170N7 Reel Size 13'' Tape width 12mm Quantity 2500 units
2002 Fairchild Semiconductor Corporation
FDS5170N7 Rev C1(W)
FDS5170N7
Electrical Characteristics
Symbol
WDSS IAR
TA = 25C unless otherwise noted
Parameter
Drain-Source Avalanche Energy Drain-Source Avalanche Current Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage.
(Note 2)
Test Conditions
Single Pulse, VDD = 30 V, ID= 10.6 A
Min Typ Max Units
300 10.6 mJ A
Drain-Source Avalanche Ratings (Note 2)
Off Characteristics
BVDSS BVDSS TJ IDSS IGSS VGS(th) VGS(th) TJ RDS(on) VGS = 0 V, ID = 250 A 60 60 1 100 2 2.3 -7 9 11 16 25 43 4 V mV/C A nA ID = 250 A, Referenced to 25C VDS = 48 V, VGS = 20 V, VGS = 0 V VDS = 0 V
On Characteristics
Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance On-State Drain Current Forward Transconductance
ID = 250 A VDS = VGS, ID = 250 A, Referenced to 25C VGS = 10 V, VGS = 6.0V, VGS = 10 V, VGS = 10 V, VDS = 10 V, VDS = 30 V, f = 1.0 MHz VGS = 15 mV, ID = 10.6 A ID = 10.1 A ID = 10.6 A,TJ = 125C VDS = 10 V ID = 10.6 A V GS = 0 V,
V mV/C
12 15 23
m
ID(on) gFS Ciss Coss Crss RG td(on) tr td(off) tf Qg Qgs Qgd IS VSD trr Qrr
A S
Dynamic Characteristics
Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance
(Note 2)
2889 329 134
pF pF pF 22 20 69 40 71 ns ns ns ns nC nC nC
f = 1.0 MHz ID = 1 A, RGEN = 6
1.1
Switching Characteristics
Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
VDD = 30 V, VGS = 10 V,
12 10 43 25
VDS = 30 V, VGS = 10 V
ID = 10.6 A,
51 10 11
Drain-Source Diode Characteristics and Maximum Ratings
Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward IS = 2.5 A(Note 2) VGS = 0 V, Voltage Diode Reverse Recovery Time IF = 10.6 A (Note 2) Diode Reverse Recovery Charge diF/dt = 100 A/s 2.5 0.7 39 83 1.2 A V nS nC
Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design.
a)
40C/W when mounted on a 1in2 pad of 2 oz copper
b)
85C/W when mounted on a minimum pad of 2 oz copper
Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0%
FDS5170N7 Rev C1(W)
FDS5170N7
Dimensional Outline and Pad Layout
FDS5170N7 Rev C1(W)
FDS5170N7
Typical Characteristics
60 50 ID, DRAIN CURRENT (A) 40 30 20 10 0 0
RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE
VGS = 10V 6.0V
2.2
4.5V
2 1.8 1.6
VGS = 4.0V
4.0V
4.5V
1.4 1.2 1 0.8
5.0V 6.0V 10V
3.5V
1
2
3
0
10
20
30
40
50
60
VDS, DRAIN-SOURCE VOLTAGE (V)
ID, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with Drain Current and Gate Voltage.
0.04 RDS(ON), ON-RESISTANCE (OHM)
2 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC) ID = 10.6A VGS = 10V
ID = 5.3A
0.03
TA = 125oC
0.02
0.01
TA = 25oC
0 3 4 5 6 7 8 9 10 VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with Temperature.
60
Figure 4. On-Resistance Variation with Gate-to-Source Voltage.
100
VDS = 5V
IS, REVERSE DRAIN CURRENT (A)
50 ID, DRAIN CURRENT (A) 40 30
VGS = 0V
10 1 0.1 0.01
TA = 125oC
TA =125oC
20
25oC
25oC
10
-55oC
0.001 0.0001
-55oC
0 2 2.5 3 3.5 4 4.5 VGS, GATE TO SOURCE VOLTAGE (V)
0
0.2
0.4
0.6
0.8
1
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature.
FDS5170N7 Rev C1(W)
FDS5170N7
Typical Characteristics
10
4000 ID = 10.6A VDS = 20V 40V 30V 3200 CISS f = 1MHz VGS = 0 V
VGS, GATE-SOURCE VOLTAGE (V)
8
CAPACITANCE (pF)
6
2400
4
1600 COSS
2
800
0 0 10 20 30 40 50 60
0 0
CRSS 10 20 30 40 50 60
Qg, GATE CHARGE (nC)
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
100 1ms 10ms 100ms 1s 1 VGS = 10V SINGLE PULSE RJA = 85oC/W TA = 25oC 0.01 0.01 0.1 1 10 100 10s DC
P(pk), PEAK TRANSIENT POWER (W)
Figure 8. Capacitance Characteristics.
50
100s
ID, DRAIN CURRENT (A)
10
RDS(ON) LIMIT
40
SINGLE PULSE RJA = 85C/W TA = 25C
30
20
0.1
10
0 0.01
0.1
1
10
100
1000
VDS, DRAIN-SOURCE VOLTAGE (V)
t1, TIME (sec)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum Power Dissipation.
r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE
1
D = 0.5 0.2
RJA(t) = r(t) * RJA RJA = 85 C/W P(pk) t1 t2
SINGLE PULSE
0.1
0.1 0.05 0.02
0.01
0.01
TJ - TA = P * RJA(t) Duty Cycle, D = t1 / t2
0.001 0.0001
0.001
0.01
0.1
t1, TIME (sec)
1
10
100
1000
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b Transient thermal response will change depending on the circuit board design.
FDS5170N7 Rev C1(W)
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
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DISCLAIMER
ImpliedDisconnect PACMAN POP ISOPLANAR Power247 LittleFET PowerTrencha MicroFET QFET MicroPak QS MICROWIRE QT Optoelectronics MSX Quiet Series MSXPro RapidConfigure OCX RapidConnect OCXPro SILENT SWITCHERa OPTOLOGICa SMART START OPTOPLANAR
SPM Stealth SuperSOT-3 SuperSOT-6 SuperSOT-8 SyncFET TinyLogica TruTranslation UHC UltraFETa VCX
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
Rev. I2

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